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| MITSUBISHI Pch POWER MOSFET FY4ADJ-03A HIGH-SPEED SWITCHING USE FY4ADJ-03A OUTLINE DRAWING Dimensions in mm 6.0 4.4 5.0 1.8 MAX. 0.4 1.27 SOURCE GATE DRAIN q 4V DRIVE q VDSS ............................................................................... -30V q rDS (ON) (MAX) ............................................................. 80m q ID ......................................................................................... -4A SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings -30 20 -4 -28 -4 -1.7 -6.8 1.6 -55 ~ +150 -55 ~ +150 0.07 Unit V V A A A A A W C C g Sep.1998 L = 10H MITSUBISHI Pch POWER MOSFET FY4ADJ-03A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25C) Test conditions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -30V, VGS = 0V ID = -1mA, VDS = 10V ID = -4A, VGS = -10V ID = -2A, VGS = -4V ID = -4A, VGS = -10V ID = -4A, VDS = -10V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -30 -- -- -1.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -2.0 60 115 -0.24 6 680 180 90 10 15 50 30 -0.88 -- 70 Max. -- 0.1 -0.1 -2.5 80 180 -0.32 -- -- -- -- -- -- -- -- -1.20 78.1 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -15V, ID = -2A, VGS = -10V, RGEN = RGS = 50 IS = -1.7A, VGS = 0V Channel to ambient IS = -1.7A, dis/dt = 50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.0 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -3 -2 1.6 -101 -7 -5 -3 -2 tw = 100s 1ms 1.2 -100 -7 -5 -3 -2 10ms 100ms 0.8 0.4 -10-1 -7 -5 TC = 25C Single Pulse DC -3 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 0 0 50 100 150 200 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -20 VGS = -10V -8V -6V -5V OUTPUT CHARACTERISTICS (TYPICAL) -10 VGS = -10V -8V -6V -5V -4V DRAIN CURRENT ID (A) -16 DRAIN CURRENT ID (A) -8 -12 -4V -6 TC = 25C Pulse Test -3V -8 TC = 25C Pulse Test -4 -4 -3V PD = 1.6W -2 PD = 1.6W 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Pch POWER MOSFET FY4ADJ-03A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -2.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) TC = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) TC = 25C Pulse Test VGS = -4V -1.6 160 -1.2 120 -0.8 ID = -8A 80 -10V -0.4 -4A -2A 40 0 -10-1 -2 -3 -5-7 -100 -2 -3 -5-7-101 -2 -3 -5-7 -102 DRAIN CURRENT ID (A) 0 0 -2 -4 -6 -8 -10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) -20 TC = 25C VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 VDS = -10V 7 Pulse Test 5 4 3 2 TC = 25C 75C 125C DRAIN CURRENT ID (A) -12 FORWARD TRANSFER ADMITTANCE yfs (S) -16 101 7 5 4 3 2 -8 -4 0 0 -2 -4 -6 -8 -10 100 0 -10 -2 -3 -4 -5 -7-101 -2 -3 -4 -5 -7-102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103 7 5 4 3 2 Ciss SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 td(on) td(off) tf Coss Crss 102 7 5 4 3 2 TCh = 25C f = 1MHZ VGS = 0V -2 -3 -4 -5 -7-100 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 101 7 tr 5 4 3 TCh = 25C 2 VDD = -15V VGS = -10V RGEN = RGS = 50 -2 -3 -4 -5 -7-100 -2 -3 -4 -5 -7-101 101 -1 -10 -2 -3 -4 -5 -7-101 100 -1 -10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Pch POWER MOSFET FY4ADJ-03A HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -20 SOURCE CURRENT IS (A) VGS = 0V Pulse Test -10 TCh = 25C ID = -4A VDS = -10V -20V -25V -8 -16 TC = 125C 75C 25C -6 -12 -4 -8 -2 -4 0 0 4 8 12 16 20 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 VGS = -10V 7 ID = -4A 5 Pulse Test 3 2 THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) -4.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VDS = -10V ID = -1mA -3.2 -2.4 100 7 5 3 2 -1.6 -0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch - a) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 D = 1.0 5 3 0.5 2 1.2 101 0.2 7 5 0.1 3 2 PDM 0.05 0.02 0.01 Single Pulse tw T D= tw T 1.0 0.8 100 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (C) |
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